Test the junction depth and doping concentrations.
检测扩散结深和掺杂浓度。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
It is found that there is a threshold energy density in laser doping, and distributions of dopant density and depth have relation to preheat temperature and plating layer thickness of the impurities.
激光掺杂存在一个阈值能量密度。掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关。
The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.
分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。
The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.
分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。
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