Depletion Model Selective doped heterojunction transistor is designed and fabricated.
设计和研制了耗尽型选择性掺杂异质结晶体管。
The electronic device includes a transistor that includes the underlying doped region, the vertically-oriented conductive region, and the horizontally-oriented doped region.
电子器件包括晶体管，晶体管包括下面掺杂区、垂直定向传导区和水平定向掺杂区。
The electronic device includes a transistor that includes the underlying doped region, the vertically-oriented conductive region, and the horizontally-oriented doped region.
电子器件包括晶体管，晶体管包括下面掺杂区、垂直定向传导区和水平定向掺杂区。
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