The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.
为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。
By using different inductance values in a discharge circuit, the delay time can be changed.
通过改变放电回路中的感抗值，可以改变预电离与主放电之间的延迟时间。
How to use the CMOS buffer to make up the capacitance charge-discharge type long time delay circuits is studied.
对采用CMOS缓冲器组成电容充放电式长时间延时电路进行了研究。
How to use the CMOS buffer to make up the capacitance charge-discharge type long time delay circuits is studied.
对采用CMOS缓冲器组成电容充放电式长时间延时电路进行了研究。
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