The transistor gate has a distinct advantage over the diode gate in that the transistor amplifies, as well as acts as a gate.
晶体管门电路比起二极管门电路来有一个显著的优点，那就是晶体管除了起门的作用外还能够放大。
The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.
为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。
Its key idea is that integration of GTO with improved structure, antiparallel freewheeling diode and gate drive circuit, then connects its gate drive by low inductance.
它的关键思想是将改进结构的GTO与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接。
In the circuit shown in Figure 5-1, the gate of the SCR is connected through a resistor and diode directly to its anode.
在图5 - 1中所示的电路中，可控硅的栅极通过一个电阻器和二极管直接将其阳极连接。
This paper proposes a new gate drive method for active clamped quasi resonant converters. Instead of a digital delay circuit, only a resistor and a diode are added to produce correct drive waveforms.
提出了有源钳位准谐振变换器的一种新的驱动方式，它无需经过数字电路延时，只需一个电阻和二极管构成的小网络。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Diode D2 serves as a gate protection diode.
二极管d2用作栅极保护二极管。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
应用推荐