The depth of diffusion junction(Xj)is one of the most important parameters in wafer Fab.
在半导体芯片制造过程中，结深是重要的工艺参数之一。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
A new junction termination technique in which field plate combines with diffusion guard ring is presented. And we discuss the principle and superiority of the new junction termination technique.
提出了一种新型的场板和保护环相结合的结终端技术，并讨论了此终端结构的工作原理和优越性。
It was found that the increasing depth has little impact on the effective junction area when the wall thickness is so thin that the diffusion layers is close to converge.
实验发现，当侧壁厚度薄到两侧的扩散层接近会聚时，孔深的提高对有效结面积影响不大。
Based on the relationship between the diffusion current and voltage of PN junction, the Boltzmann's constant is measured with high accuracy.
运用半导体的PN结扩散电流与电压关系特性，精确地测量了玻尔兹曼常数。
We have prepared the diffusion barrier layers, pn junction and electrodes.
初步探索了阻挡层制备、扩散制结以及电极制备等相关工艺。
We have prepared the diffusion barrier layers, pn junction and electrodes.
初步探索了阻挡层制备、扩散制结以及电极制备等相关工艺。
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