The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
However, cracks initialized in the diffusion layer between substrate and bond coat when TBCs were tested with low cycle fatigue at high temperature.
而在高温低周疲劳条件下裂纹是在粘结层与高温合金基体的扩散层处。
The hydrogen diffusion behavior of AB5-based alloy at low temperature is studied by constant potential step technique.
用恒电位阶跃法研究了低温下ab5型储氢合金中的氢扩散行为。
The hydrogen diffusion behavior of AB5-based alloy at low temperature is studied by constant potential step technique.
用恒电位阶跃法研究了低温下ab5型储氢合金中的氢扩散行为。
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