• A second dielectric layer covers the address electrodes.

    第二介电层覆盖寻址电极。

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  • An interface layer is formed on the gate dielectric layer.

    在栅极电介质层上形成界面层。

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  • The intermediate member includes at least one dielectric layer.

    该中间元件包括至少一个介电层。

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  • The programmable via device comprises a first dielectric layer;

    可编程通孔器件包括第一介电层;

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  • A first dielectric layer covers the pairs of sustain electrodes.

    第一介电层覆盖成对的维持电极。

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  • A dielectric layer (18) is formed overlying the sacrificial layer.

    形成在牺牲层上面的电介质层(18)。

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  • The fuse element (2) is formed over the second dielectric layer (4).

    熔丝元件(2)在第二介质层(4)上形成。

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  • A first electrode layer is deposited over the first dielectric layer.

    在第一介电层上沉积第一电极层。

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  • The dielectric layer so formed may be used in the fabrication of MOSFETs (145).

    这样形成的介质层可 以用于制造MOSFET(145)。

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  • The solder mask is configured on the dielectric layer and covers the circuit layer.

    焊罩层配置在介电层上且覆盖线路层。

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  • The dielectric layer is arranged between the solid state electrolyte layer and the metal layer.

    而介电层是在固态电解质层与金属层之间。

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  • The secondary electron emission from the dielectric layer makes the discharge current increase.

    绝缘介质层的二次电子发射,使放电电流增大。

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  • In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate.

    实施例中,本方法包括在半导体衬底上形成栅极电介质层。

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  • The circuit layer is contacted with the dielectric layer and is provided at least one gasket joint.

    线路层接触介电层,且线路层具有至少一接垫。

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  • The protection plate (10) is formed within the first dielectric layer (14) using a damascene process.

    保护板(10)利用镶嵌工艺在第一介质层(14)中形成。

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  • Therefore any electrolytic capacitors within the product will still have a near perfect dielectric layer.

    因此产品里所包含的电解电容仍有一个接近完美状态的电介质层。

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  • The dielectric layer comprises a plurality of openings which are formed on the heat dissipation thin layer.

    所述介电层包含多个开口,形成于该散热薄层上。

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  • A wiring and interlayer dielectric layer may be formed over the first substrate including the readout circuit.

    可在包括读出电路的第一衬底上方形成布线和层间介电层。

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  • The dielectric layer electrically insulates the sensor from the combustor surface, which is typically grounded.

    电介质层将传感器与燃烧表面电绝缘,该表面一般接地。

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  • The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

    保护板(10)适于保护第一介质层(14)不受来自激光束(52)的能量。

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  • The lower conductive plug is in contact with a phase change material pattern disposed on the lower interlayer dielectric layer.

    下导电栓与设置于下层间介电层上的相变材料图案接触。

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  • And the conclusion is presented too. It is easy to design and manufacture waveguide filter using dielectric layer PBG structures.

    利用介质层pbg结构来制作波导滤波器具有设计简单、易于实现的显著优点。

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  • The dielectric layer and the barrier ribs are colored with two complementary colors that essentially filter out nearly all light.

    所述介电层和间隔壁由两种互补色着色,基本上滤除了几乎所有的光。

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  • A first interlayer conductive joint hole is formed on and through an interlayer dielectric layer and a dielectric etch stop layer.

    一第一层间导电接孔形成于且穿过一层间介电层以及一介电蚀刻停止层。

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  • The circuit board comprises a dielectric layer, a circuit layer and at least one electricity-conducting joint pole and a solder mask.

    一种电路板,其包括介电层、线路层、至少一导电接合柱与焊罩层。

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  • The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14).

    第 二介质层(4)的介电常数大于第一介质层(14)的介电常数。

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  • The structure (1) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4).

    所述结构(1)包括熔丝元件(2)、保护板(10)、第一介质层(14),以及第二介质层(4)。

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  • A first dielectric layer covers the common electrodes and the scanning electrodes, and it includes groove shaped field concentration units.

    第一介电层覆盖公共电极及扫描电极,并且包括凹槽形状的场集中单元。

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  • A second interlayer conductive joint hole is formed on and through the interlayer dielectric layer and is contacted with the second plate electrode.

    该第二层间导电接孔形成于且穿过该层间介电层,且与该第二平板电极相接触。

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  • The method can avoid multicrystal silicon residue between the sidewall of the dielectric layer and the dielectric layer, thereby preventing leakage current.

    本方法避免在介电层的侧壁以及介电层之间产生多晶硅残留,防止漏电流发生。

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