In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
PEX? Insulator features low dielectric constant for clearer highs.
交联聚乙烯绝缘特性？低介电常数更明确的高点。
Traditionally, this insulator is made of epoxy, epoxy filled glass fiber, polyimide, or other dielectric materials.
一般上，绝缘介质是由环氧树脂。环氧填充玻璃纤维。聚酰亚胺，或其他介质材料制成。
Traditionally, this insulator is made of epoxy, epoxy filled glass fiber, polyimide, or other dielectric materials.
一般上，绝缘介质是由环氧树脂。环氧填充玻璃纤维。聚酰亚胺，或其他介质材料制成。
应用推荐