Device Processing: Etching. Surface passivation; dielectric films.
元件制程：蚀刻，表面钝化，介电材料薄膜。
On the basis of the theory, we can analyze and design different dielectric materials or multiplayer dielectric films.
以此理论为依据，可对不同介质材料或多层介质薄膜进行分析设计。
Exact dispersion relations for TM waves guided by thin dielectric films covered on one or two sides media of intensity-dependent refractive indexes have been derived.
对于介质薄膜波导的一边或两边复盖有介电常数与光强成正比的非线性介质的三种不同结构，本文导出了三层非线性平面光波导TM波的精确色散关系。
The synthesis, structure, properties and process interaction of low k dielectrics are reviewed. Characterization techniques for low k dielectric films are summarized.
综述了低介电常数介质薄膜的制备方法、结构与性能表征、工艺兼容性等领域的最新进展。
Study indicated that oxygen deposition pressure exerts a strong impact on the microstructure and the dielectric properties of the films.
采用不同的沉积氧气压，分析了其对薄膜微观结构和介电性能的影响。
Dielectric thin film is an important sort of electronic thin films.
介质薄膜是一类重要的电子薄膜。
Investigated were the effects of substrate temperature on the structures and surface morphology, dielectric properties of films.
研究了衬底温度对薄膜结构、表面形貌以及介电性能的影响。
Dielectric breakdown of BST thin films prepared by RF sputtering is studied in this paper.
采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性。
Dielectric thin film was an important kind of electronic thin films, which has wide applications in microelectronic and photo-electronic technology.
介电膜，是一种重要的电子薄膜。在微电子技术和光电子技术中有着广泛的应用。
Dielectric constant polarization coercive voltage and leakage current have relations with the thickness of thin films because of the interface layer.
界面层的存在使介电系数、自发极化、矫顽电压、漏电流都与薄膜的厚度有关。
A physical model of dielectric breakdown was presented in IC silicon dioxide films.
提出了芯片门电路硅氧化层静电放电介质击穿的物理模型。
PST thin films are ferroelectric materials with many advantages such as excellent ferroelectric, pyroelectric and dielectric properties.
PS T铁电薄膜是一种具有优良铁电、热释电和介电等性能的铁电材料。
The result shows that the surface of composite film is very smooth, and the dielectric properties are close to the conventional polycrystalline diamond films.
结果表明，复合结构由普通多晶金刚石薄膜和纳米金刚石薄膜组成，薄膜的表层结构体现了纳米金刚石的特征。
Optical constants and dielectric constants of normal cesium oxide thin films are related to wavelength of incident light and cesium impurity contained.
正常氧化铯薄膜的光学常数和介电常数随铯杂质含量和入射光波长有关。
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
对于在用作集成电路的层间介电体时的改善性能，确定了低介材 料和包含该材料的薄膜及其制备方法。
The effect of the polarization field on the piezoelectric and dielectric properties of PVDF films was also studied.
并探讨了极化电场对薄膜压电介电性能的影响。
Test results of the dielectric properties of A1N films are given.
本文给出了A 1 N膜介电特性的测试结果。
Compared with the uniform PZT thin films, the PZT multilayer with alternating dense-PZT and porous-PZT layers exhibits an enhancement both in ferroelectric and dielectric performances.
同均一相pzt薄膜材料相比，由致密层和多孔层交替排列形成的近周期PZT多层膜具有铁电、介电增强效应。
The crystallization temperature and dielectric properties of PLZT thin films with PLT seeding layers were investigated.
研究了有晶种层的PLZT薄膜的结晶温度及介电性能。
There are many kinds of the modern dielectric thin films in common use, which are classified according to their compositions as three: inorganic, organic and combined.
现代常用的介质薄膜种类很多，按其成分可分为无机薄膜、有机薄膜和复合薄膜三类。
It is, therefore, suitable for measuring weak absorption in dielectric thin films.
它适用于介质薄膜的弱吸收测量。
This system can be used in research of high-resistance materials such as thin dielectric layers on semiconductors, DLC and piezo-films, conductive polymers etc.
这套系统可以用于研究高电阻的材料，例如在半导体基体上的绝缘薄膜，DLC和压电薄膜，导电聚合物等。
High dielectric constant thin films have been used in high-density dynamic random access memories widely.
高介电常数薄膜广泛应用于动态随机存储器中。
The CCTO films prepared with different preheating temperature after rapid thermal annealing treatment have the smaller dielectric loss, and the values lie in between 0.1~0.35.
不同预烧温度所制备的CCTO薄膜，经快速热退火处理后，其介电损耗值较小，基本在0.1~0.35之间。
The piezoelectric strain coefficient and the dielectric constant of PVDF films increased, and the dielectric loss decreased with the increasing of the polarization field.
随着极化电场的升高，PVDF压电薄膜的压电应变系数升高，介电常数升高，介电损耗降低。
A novel route to prepare low-dielectric constant mesoporous SiO_2 films is reported in this paper.
本文报道了一种新型纳米多孔低介电常数薄膜的制备方法。
A novel route to prepare low-dielectric constant mesoporous SiO_2 films is reported in this paper.
本文报道了一种新型纳米多孔低介电常数薄膜的制备方法。
应用推荐