The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.
摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。
Thus it is significance to carrying on computer simulation to the Gunn device.
因此对耿器件进行计算机模拟就显得很有意义。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
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