Light striking this detector liberates electrons from some of the silicon atoms, producing an electrical signal that is converted by the chip's electronics into a picture.
光照射到这个感应芯片上面然后从硅原子中激发释放出电子，这样就产生了一个电信号然后通过芯片的电子器件转化成图像。
Therefore, the detector consists of a 16-by-16 array of ultra-thin silicon diodes, connected by thin wires.
因此，这个传感组件由一组超薄硅二极管组成一个16x16的阵列，通过极细的导线连接。
This paper presents a new system for optical spectrum record, using the automatic scanning silicon photodiode array detector. The data acquisition are fulfilled in real-time.
本文介绍了采用自扫描硅光电二极管阵为探测器的光谱记录系统，以及实时数据采集系统。
A system of measuring light power and wavelength is designed and fabricated, using Silicon Color Sensor with double PN junction as detector, single chip processor as controller and PC as processor.
设计并实现了一种用硅双结色敏器件作为探测器，单片机作为控制器，PC作为处理器和显示器的光功率、波长同步测量系统。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
A novel uncooled silicon capacitive infrared detector with high speed and sensitivity is introduced. The design idea and fabrication processes of this infrared detector are described in detail.
介绍了一种新型非制冷高速高灵敏度硅基电容式红外探测器的工作原理，描述了探测器的设计思想及制作工艺。
In this paper, the silicon microstrip detector for particles in introduced. The paper is mainly focused on the basic structure and principle of the devices. .
本文主要介绍硅微条粒子探测器的研究情况，侧重于器件的基本结构及其工作原理。
Sensor element, which consists of a Fabry-Perot etalon fabricated from single-crystal silicon, connects with the LED and detector by fibers.
传感器敏感元件主体结构采用单晶硅的法布里帕罗标准具，并通过光纤与发光二极管和光电探测器等光学元件相连。
The advanced system based on the amorphous silicon detector was applied to acquire rich original image.
采用先进的非晶硅数字检测系统获取信息丰富的原始图像，叠加曝光降低图像噪声；
This detector line array is fabricated using 2 micron design rule and a double level poly silicon structure.
器件采用最小2微米设计规则，两层多晶硅结构。
This detector line array is fabricated using 2 micron design rule and a double level poly silicon structure.
器件采用最小2微米设计规则，两层多晶硅结构。
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