The photo-oxidation reaction of poly (styrene-sulfone)-a novel positive deep UV photoresist including film and solution has been studied by fluorescence spectra.
利用荧光光谱研究了聚苯乙烯砜正性远紫外抗蚀剂薄膜和溶液的光氧化反应。
Therefore, such factors having effect on the precision of deep UV lithography as diffraction effect, exposure dosage, wavelength and distribution of fly's eyes lens etc.
同时由于紫外光的衍射效应，获得高精度的大高宽比结构并不容易。本文深入研究了影响紫外深度光刻图形转移精度的如下因素；
From the pl spectrum, the UV emission peak of the sample annealed in vacuum increase clearly and deep-level emi.
从光致发光光谱中发现，真空退火后的样品的紫外光谱峰显著增强，而深能级发射峰几乎消失。
From the pl spectrum, the UV emission peak of the sample annealed in vacuum increase clearly and deep-level emi.
从光致发光光谱中发现，真空退火后的样品的紫外光谱峰显著增强，而深能级发射峰几乎消失。
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