Then, the influence of deep-submicron technology on IDDQ testing is explained. And the improved IDDQ testing methods are also given.
分析了深亚微米技术对IDDQ测试的影响以及IDDQ的改进方法。
The research result of this paper has some directive meaning and applicable value in physical design and optimization for VLSI under deep-submicron technology.
本文的研究结果对于深亚微米工艺下的大规模物理设计与优化，具有一定的指导意义和应用价值。
Interconnect wire delay is a very important question that must to be resolved in deep submicron IC design.
深亚微米集成电路的互连线延迟是设计中需十分重视并必须解决的问题。
With deep submicron technology, crosstalk noise becomes more and more serious.
随着深亚微米技术，串扰噪声问题越来越严重。
In deep submicron era, IC design in physical design has more and more challenge, with the increasing design scale, faster clock frequency and minimizing process dimension.
在深亚微米时代，随着设计规模变大，时钟频率越来越高以及工艺尺寸的减小，IC物理设计面临着诸多困难。
In this article, deep submicron lithography and nano processing are reviewed.
本文综述了深亚微米光刻和纳米光刻技术。
Familiar with deep submicron process design rule.
熟悉深亚微米工艺设计规则。
The physics, structure and technology of the deep submicron MOS devices were given.
本文从器件物理、器件结构和工艺等三个方面介绍了深亚微米器件。
The deep submicron technology presents lots of new challenges to the physical design of VLSI and new techniques are needed in the back-end design flow.
深亚微米下芯片的物理设计面临很多挑战，特别是对于超大规模电路，在后端设计流程上要有新的方法。
Due to the large load capacitance and increasingly serious inter-wire coupling, deep submicron buses are facing many problems like power, delay and reliability.
大的负载电容和日益严重的线间耦合使得深亚微米总线面临着功耗、延迟和可靠性等问题。
Since deep submicron manufacturing process is widely used in microprocessors, transient faults have become the main source of chip faults.
随着深亚微米工艺的广泛应用，瞬态故障已成为芯片失效的主要原因。
Deep submicron IC design will bring many new challenges.
深亚微米芯片设计的会带来许多新的挑战。
Though it can solve many problems during RF analog IC design in deep submicron meter technology, but it still can't i(?)place all conventional analog circuit component or structure.
模拟电路数字化虽可解决很多深亚微米工艺射频模拟集成电路设计中出现的问题，但暂时依然无法完全替代传统模拟电路器件和结构。
As the integrated circuit design has stepped into the deep ultra-submicron stage, the complexity of the circuit increases continually, chip test faces very huge challenge.
随着集成电路设计进入超深亚微米阶段，电路复杂度不断提高，芯片测试面临着巨大的挑战。
Now, the present ion implantation technology, especially ion implantation equipment and systems, can not meet the needs in the manufacturing of deep submicron devices and circuits.
就目前而言，已有的离子注入技术(包括离子注入设备系统)尚不能满足甚亚微米器件和电路制造的需要。
Experimental results of deep submicron lithography with a excimer laser are reported in this paper.
报道用远紫外准分子激光进行亚微米光刻的实验结果。
Experimental results of deep submicron lithography with a excimer laser are reported in this paper.
报道用远紫外准分子激光进行亚微米光刻的实验结果。
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