Proton decay, Decay lifetime, Baryon-number Conservation, Detector.
质子衰变；衰变寿命；重子数守恒；探测器。
On the base of fluorescence quantum yield and lifetime measurement, the rate constants of radiation decay and non radiation decay of this compound were calculated.
在测定其荧光寿命及荧光量子产率基础上计算出它们的辐射及非辐射衰变速度常数。
Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.
开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
And the decay rate of these deviations depends on not only the carrier lifetime but also the photon lifetime, which is different from that of an ordinary diode laser experiencing turn-on process.
该衰减率不仅与载流子寿命有关，还和光子寿命有关，这一点与普通半导体激光器“接通”时的动态行为有所区别。
Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
Conventional analyses of fluorescence lifetime data resolve the fluorescence decay profile in terms of discrete single exponential components with distinct lifetimes.
传统的荧光寿命成像的数据分析，按某些具有不同寿命、离散的单参量指数模型来描述荧光衰减过程。
A new method to measure fluorescence lifetime, which compose Lssajous figure to a straight line with fluorescence decay curve and RC curve line is described in this paper.
本文介绍了一种测量荧光寿命的新方法：利用荧光衰减曲线和RC电路衰减曲线合成李萨如图形来测量固体荧光材料的荧光寿命。
This log has been replaced by the neutron -lifetime and neutron-decay-time logs.
氯测井已经被中子寿命测井和热衰减时间测井所代替。
This log has been replaced by the neutron -lifetime and neutron-decay-time logs.
氯测井已经被中子寿命测井和热衰减时间测井所代替。
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