It also describes an analogue servo-system for the control of Czochralski crystal growth from "seed-on" to growth termination and the operation of this system.
设计出用于提拉法生长晶体中从放肩到等径生长的直径控制的闭环系统。给出了该系统的运行结果。
In the Czochralski crystal growth process, the main method is regulating the pulling speed and heater temperature to track the target curves, in order to achieve the diameter growth of crystal.
在直拉法晶体生长过程中，主要是通过调节提拉速度和加热器温度跟踪目标曲线来实现晶体等径生长的。
Compared with Czochralski method SGG single crystal growth with crucible capsuled vertical Bridgman method can improve crystal production and lower the cost efficiently.
与提拉法相比，采用坩埚密封的下降法生长sgg单晶，可以显著提高晶体产率，降低成本。
This paper reported a new procedure for growth of 5 inch diameter LT crystal in Ir-crucible by using Czochralski method.
本文着重介绍了用铱坩埚提拉法生长5英寸钽酸锂（ LT）晶体的工艺过程，该工艺使用超大尺寸铱坩埚生长LT晶体；
High stability of vacuum pressure in the hearth of Czochralski (CZ) crystal growing furnace plays a very important role in the normal growth of monocrystalline silicon.
直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。
High stability of vacuum pressure in the hearth of Czochralski (CZ) crystal growing furnace plays a very important role in the normal growth of monocrystalline silicon.
直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。
应用推荐