Well, for example,if our surface is a plane, a slanted plane given by some equation, ax by cz = d.
比如说，假如我们的曲面是一个平面，由公式ax+by+cz=d给出的，一个倾斜的平面。
CZ – abbreviation for Control Zone.
管制区的缩写。
One Rhodopseudomonas CZ-2 strain was isolated from a turtle pond.
从露天养鳖池中分离到红假单胞菌CZ - 2菌株。
Oxygen precipitation is an important subject of defect engineering for CZ silicon.
氧沉淀是直拉硅单晶缺陷工程的重要研究课题。
Automatic diameter control (ADC) is a key technique for the CZ crystal growth equipment.
自动直径控制(adc)技术是直拉法晶体生长设备的一项关键技术。
Hefei basin is a Mz-Cz residual basin generated from common action by Dabie orogen and Tanlu Tancheng?
合肥盆地是大别造山带和郯庐断裂带共同作用产生的中新生代残留盆地。
The experiment indicated that the liquid culture of CZ-2 could increase the weight of young turtle by 8.9%.
试验表明CZ - 2菌株培养液对幼鳖生长有促进作用，比对照提高了8.9%。
CZ-2C is a two-stage liquid propellant launch vehicle, which is suitable for launching heavier LEO satellite.
CZ - 2c是适用于发射低轨道、质量较大卫星的二级液体运载火箭。
The behavior of oxidation-induced stacking faults (OSF) in NCZ and CZ silicon single crystal was investigated.
采用直拉法生长普通和掺氮硅单晶，研究不同含氮浓度的晶体中氧化诱生层错（OSF）的行为。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
Hefei basin is a Mz-Cz residual basin generated from common action by Dabie orogen and Tanlu (TanchengLujiang) fault zone.
合肥盆地是大别造山带和郯庐断裂带共同作用产生的中新生代残留盆地。
The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响。
The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.
本文研究了直拉硅单晶的氧内吸杂（IG）工艺中，单晶的碳含量对缺陷形成的影响。
The system concept, main sub systems, parameters and capacity of China′s new LM-1D(CZ-1D) small launch vehicle are also introduced.
同时介绍中国新的长征一号丁（CZ-1D）小型运载火箭的总体方案、主要系统、参数及运载能力。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
The S /TT /CZ system could also decrease the compression set of NBR and endowed the NBR/ECO blend with good comprehensive properties.
低硫高促硫化体系S/TT/CZ可以使NBR胶料具有较低的压缩永久变形，而且赋予NBR/ECO共混胶料良好的综合性能。
An analysis on main reason for leaking of the mechanism airproof system of the CZ-model pumps is made and a resolution is put forward.
分析了CZ型泵机械密封泄漏的主要原因并提出了解决措施。
Applying the infrared polariscope made by ourselves, the distribution of the stresses in crystals grown by CZ and FZ have been researched.
应用自制的红外光弹装置，研究了直拉单晶和区熔单晶的应力分布。
Objective: To investigate the therapeutical effects of Cangzhi granule (CZ) on patients with functional dyspepsia and its pharmacodynamics.
目的：观察苍脂颗粒(CZ)对功能性消化不良的治疗效果并进行药效学研究。
The results showed that CZ-601 was comparable to and could replace the imported product of the same kind in processability and heat stability.
测试及用户试用的结果均表明，CZ- 601在加工性能和热稳定性上与进口同类产品相当，可以替换使用。
The recent advances of vulcanization accelerator CZ are reviewed with emphasis on the synthetic technology and application with 13 references.
综述硫化促进剂CZ的合成工艺及应用技术进展。
Finally, the ductile damage and failure behaviors of aluminum alloys LY12-CZ thin-slabs were investigated both analytically and experimentally.
文中还就LY 12 -CZ薄板材料的损伤与破坏行为进行了实验测试与分析。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
The mounting resonant frequency of vibration measurement system formed with piezoelectric acceleration sensor YD-1 and mounted magnetic base CZ-4 is addressed.
介绍了YD - 1型压电式加速度传感器与CZ - 4型磁座构成的磁座安装测振系统的安装谐振频率。
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法（PCD）研究了热氧化钝化对直拉硅少子寿命的影响。
He studied the light curves of asteroids and thus their rotation, and also studied the variable star CZ Cassiopeiae, and the evolution of the orbit of Comet Halley.
张钰哲研究小行星的光变曲线和旋转、CZ仙后座变星以及哈雷彗星轨道的变化。
High stability of vacuum pressure in the hearth of Czochralski (CZ) crystal growing furnace plays a very important role in the normal growth of monocrystalline silicon.
直拉单晶炉生长过程中炉膛内真空度的高稳定性对硅单晶正常生长起到很重要的作用。
The dynamic responses of aeroelastic models based on CZ-2 and Saturn IB under ground wind load are calculated. The results are in good agreement with the measured responses.
并对CZ - 2、土星IB气动弹性模型在地面风荷载下的动态响应进行工程计算，与试验结果有良好的一致性。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
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