The invention provides a method for manufacturing CVD silicon oxide capable of improving forming quality.
本发明提供了一种可提高成形质量的CVD氧化硅制造方法。
The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.
采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。
The experiment of the deposition of diamond thin films is made on silicon substrate by using microwave plasma chemical vapor deposition (CVD) system.
利用微波等离子体化学气相沉积(CVD)设备，在硅基片上进行了金刚石薄膜的沉积实验。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
In this paper, we synthesized some one-dimensional nano-materials including the silicon nanowires with orderly array, different diameters and silicon nanotubes via methods of CVD,.
本论文通过CVD、热蒸发等方法，制备了有序化自组装纳米硅丝阵列、不同直径纳米硅丝、纳米硅管等一维纳米材料。
The silicon oxide films on aluminum alloys matrix were prepared by chemical vapor deposition (CVD) in ambient pressure.
采用常压CVD方法在铝合金基底上制备出硅氧化合物陶瓷膜层。
Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied.
研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
Silicon nano-wires (SiNWs) were fabricated on Anodized Aluminum Oxide (AAO) template and silicon chips by the Chemical vapor Deposition (CVD) and thermal evaporation method.
本课题利用化学气相沉积(CVD)和热蒸发法在硅片称底和多孔氧化铝(aao)模板上制备纳米硅线。
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