Current information on SSH tunneling and setup is fragmented and limited to specific applications, or it is written at a system administrator's level.
目前，有关SSH隧道建立和设置的信息并不是很完整，而且局限于特定的应用程序，或者编写于系统管理员的级别。
Scanning tunneling microscope (STM) work by the voltage added to the microscope probe tip and the ends of the scanned object and then detect current changes.
扫描隧道显微镜(STM)的工作方式是把电压加到显微镜探头尖端与被扫描物体这两端，然后检测电流变化。
Most MRAMs that are now being developed write data by applying the magnetic field generated by a current running through a wire near a tunneling magnetoresistive element to change the magnetization.
第一代MRAM的数据写入方式主要是向导线中通电使其周围产生磁场，从而改变邻近的存储单元的磁化程度。
Tunneling process is important in the low to moderate current density range.
在中等电流密度下，隧道穿透过程是重要的。
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
Testing experiments were carried out to observe the static, dynamic characteristics of the tunneling current sensor and the static characteristics is calibrated.
进行了隧道电流传感器的静态、动态特性的检测试验，并对传感器静态特性进行了标定。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
Mechanical sensitivity and relation between the tunneling current and the distance of electrode are discussed.
讨论了系统的机械灵敏度及隧道电流与隧道电极间隙的关系。
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.
理论研究了非对称双势垒结构中光学声子发射率和光学声子辅助隧穿电流。
The effect of neutral trap on tunneling current in ultrathin MOSFETs is investigated by numerical analysis.
用数值分析的方法讨论了中性陷阱对超薄场效应晶体管（MOSFET）隧穿电流的影响。
The external condition could induce the change of piezoelectric field in superlattices and further induce the change of tunneling current.
外界条件可引起超晶格中内建电场的变化，进而引起隧穿电流的变化。
Subsequently, we study the evolution of the quantum state, the quantum squeezing effects of the charge and the current, and the quantum CR phenomenon of the tunneling current in the capacitance.
研究了电路量子态的演化，电路中电荷及电流的量子压缩效应以及介观电容器中隧穿电流的量子崩塌与复苏现象。
Secondly, the transient characteristics of FN tunneling and hot hole (HH) stress induced leakage current (SILC) in ultra-thin gate oxide are investigated respectively in this dissertation.
其次，本文分别研究了FN隧穿应力和热空穴（HH）应力导致的超薄栅氧化层漏电流瞬态特性。
The tristable resonant tunneling devices(RTD)with a double negative differential resistance in its I-V characteristics have a high current ratio(5.
在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件，室温下可以达到较高的电流峰谷比5。
Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.
最后，我们的模拟发现，普通soi结构SBSD - MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。
We also investigate the coherent atomic tunneling current between BECs, and find that under certain conditions coherent atomic tunneling current may be a pure DC atom current.
我们还研究了两个凝系间的隧穿原子流，发现在一定条件下可获得一个只含纯直流的原子流。
The gate current is produced by the tunneling, the electron surmounting and percolation.
发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。
Following the route that has led to Eq. (2), find a similar expression for the current from material 2 into the material 1. For the total tunneling current obtain.
根据导出方程（2）的步骤，找出从材料2到材料1的电流的相似表达式。对总隧穿电流有。
We study the spin Hall conductivity and tunneling spin current in the bilayer two-dimensional electron gas.
我们研究了双层二维电子气中的自旋霍尔电导率以及隧穿自旋流。
The calculated tunneling current agrees with the fast neutron irradiation experiment.
隧穿电流的变化趋势同中子辐照实验数据相吻合。
In moderate field region, traps can be filled by both FN current and direct tunneling of electron into the traps. It results in a quasi-saturation in the leakage current.
在中等电场区域，注入电子能通过FN电流和直接隧穿到达能被填充的陷阱，从而使漏电流产生准态饱和。
Consequently, it is hard for designers to predict and clarify the tunneling current of SETs (MTs), making the realization of nano- device circuit extremely difficult.
因此对一个元件设计者而言非常不容易预测及厘 清单电子电晶体及分子电晶体的穿隧电流，从而 使得奈米元件电路难以成真。
It is also explored that the physical origin about the suppression of resonant-tunneling current by a perpendicular magnetic field.
同时还探求了垂直磁场对共振隧穿电流峰抑制作用的物理机制。
It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-level-assistant tunneling;
结果表明，相对理想情形，特性曲线的反向偏压区漏电因深能级隧穿偏大；正向小偏压下因沿着位错汇聚金属产生漏电流；
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
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