For gate oxide breakdown OTP memory, we present a viable NOR array structure and current sense amplifiers.
针对栅氧化层击穿otp存储单元提出了可行的阵列结构和电流敏感放大器。
A semiconductor memory circuit reduces a current consumed by sense amplifiers, prevents erroneous operation, and can operate at high speed.
一种减少读出放大器功耗，防止错误操作并可高速工作的半导体存储器。
A semiconductor memory circuit reduces a current consumed by sense amplifiers, prevents erroneous operation, and can operate at high speed.
一种减少读出放大器功耗，防止错误操作并可高速工作的半导体存储器。
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