• Their first strategy is a technique, common in chip manufacturing, called doping, in which atoms of some other element are added to a semiconductor crystal.

    第一步策略是一个在芯片产业上普遍使用的技术,叫做“掺杂”,就是在半导体晶体中加入其它元素的原子。

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  • He then set out to make a new type of semiconductor crystal that would be able to emit visible, red light.

    之后他就开始着手研制一种新型的可以发出可见红光的晶态半导体。

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  • All of the currents (in virtually all integrated circuits) are confined to a very thin region near one face of a semiconductor crystal.

    所有的电流(在所有的集成电路中)实际上局限于靠近半导体晶体面非常薄的区域内。

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  • Fixed abrasive wire saw is recognized as one of the best methods in cutting large size semiconductor chip and function crystal because of its incomparable advantages.

    在大尺寸半导体基片和功能晶体的切割中。固结磨料线锯以无可比拟的优点被认为是最好的切割方法之一。

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  • Method of surface treatment, crystal substrate, and semiconductor device.

    表面处理方法,晶体基材,和半导体设备。

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  • The study on this subject plays an important role in explaining the phenomena of light transition and transport in the ionic crystal and polar semiconductor.

    极化子的研究对于解释离子晶体和极性半导体的光跃迁过程及输运现象有重要意义。

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  • Physical vapor deposition in horizontal systems has been used for the growth of crystal thin-film of organic semiconductor pentacene.

    用物理气相沉积法在水平系统中生长有机半导体并五苯晶体薄膜。

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  • The silicon in semiconductor components has to be mono crystalline: it has to have a very pure crystal form without defects in the crystal structure.

    硅在半导体元件要单结晶:它需要有一个非常纯净的晶体形式,如果没有缺陷的晶体结构。

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  • A thermal treatment step is next performed so as to recrystallize the amorphized region of the defective semiconductor crystal material.

    然后执行热处理步骤,以便使有缺陷的半导体晶体材料的非晶化区域再结晶。

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  • Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.

    由此,能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。

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  • A method in which a defective semiconductor crystal material is subjected to an amorphization step followed by a thermal treatment step is provided.

    提供了一种方法,其中,对有缺陷的半导体晶体材料执行非晶化步骤,随之以热处理步骤。

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  • The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.

    一种定向凝固生长多晶硅锭工艺,本发明属于半导体材料硅晶体的制备。

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  • Quantum dot, a semiconductor nano-crystal could eradiate fluorescence, possess unique optical property.

    量子点作为一种能发射荧光的半导体纳米微晶体,具有独特的光学性质。

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  • The invention relates to an adhesive film composition for assembly of semiconductor, an adhesive film and scribing crystal particle binding film.

    本发明涉及一种半导体装配用胶粘剂膜组合物、胶粘剂膜以及划片晶粒粘结膜。

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  • The utility model uses the semiconductor straining sheet sensor as a force element and adopts liquid crystal to direct display the value of the measuring force.

    它用半导体应变片式传感器作测力元件,采用液晶直接显示测力数值。

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  • The invention discloses the method of reclaiming and utilizing the silicon single crystal waste of semiconductor device and integrated circuit.

    本发明公开了一种半导体器件与集成电路硅单晶废弃片的回收利用方法。

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  • The conduction characteristic for determining this is a combination of material type of the semiconductor, crystal plane, orientation, and strain.

    用于确定此点的传导特性是半导体材料类型、晶面、取向以及应变的组合。

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  • The present invention relates to an apparatus for manufacturing a high-quality semiconductor single crystal ingot and a method using the same.

    本发明涉及一种用于制造高质量半导体单晶锭的装置以及使用该装置的方法。

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  • The compound semiconductor is a thin film of a single crystal.

    化合物半导体为单晶薄膜。

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  • The at least one non-semiconductor monolayer is constrained within a crystal lattice of adjacent base semiconductor portions.

    所述至少一个非半导体单层在邻近的基础半导体部分的晶格内被约束。

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  • The at least one non-semiconductor monolayer is constrained within a crystal lattice of adjacent base semiconductor portions.

    所述至少一个非半导体单层在邻近的基础半导体部分的晶格内被约束。

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