In VGF crystal growth procedure, the crystal growth rate depended on the temperature at control point and the cooling rate.
VGF技术生长晶体时，晶体的生长速率主要取决于控温点的温度及降温速率。
The metastable zone is narrowed, and the crystal growth rate is increased in the presence of calcium acetate as an impurity.
醋酸钙杂质的存在使木糖溶液介稳区变窄，晶体生长速率加快。
During the crystal growth by VBM, the relationships between crucible descending rate and crystal growth rate greatly influence the crystal quality.
在垂直布里奇曼法（VBM）晶体生长的过程中，坩埚下降速度和晶体生长速度之间的关系对生长出来的晶体质量有很大的影响。
The results show that the increasing rate of APT nucleation rate is bigger than that of APT crystal growth rate as temperature increasing and the granularity of crystal product is fine.
研究结果表明，温度升高，APT成核速率的增长幅度大于晶体生长速率的增长幅度，结晶产品粒度变细。
The results show that the existing of potassium ions in sodium aluminate solutions cannot markedly affect the activation energy of crystal growth but can change the crystal growth rate.
结果表明，钾离子的存在改变了晶体的长大速率，但并没有显著改变种分反应活化能。
Mixing phenomna in industrial crystallization, and effects of mixing characteristics on the crystal growth rate were discussed using the principles and methods of chemical reaction engineering.
运用化学反应工程的观点和方法研究了工业结晶过程中流体的混合状态及其对晶体生长速率的影响。
Meanwhile, fine crystal discharge device was added in crystallizer to decline quantity of crystal nucleus and to increase crystal growth rate so as to reach the aim of improving crystalline quality.
同时在结晶器中增加细晶排出装置，降低晶核数量，提高晶体生长速率，达到改善结晶质量的目的。
If the generation of the nucleation rate faster, and crystal nucleus formation, growth speed is slow, it generated more cell number, grain is fine.
如果晶核的生成速度较快，而晶核生成后的成长速度较慢，则生成的晶核数目较多，晶粒较细。
The rate of crystal growth, reaction mechanism and control step of AQM were studied.
研究了四钼酸铵（AQM ）晶体生长速率、反应历程和控制性步骤。
Some factors which can influence the quality of crystal were analyzed , such as purity of solution , growth rate and flow form .
并且从微观生长机制角度，分析了溶液纯度、生长速度、流体等因素对晶体质量的影响。
The growth mechanism of DKDP crystal was described by the formation, diffusion and adsorption of growth unit of DKDP crystal. The method of increasing the growth rate was discussed.
从DKDP晶体生长基元的形成、扩散、吸附等方面研究了DKDP晶体生长的微观机制，提出了提高晶体生长速度的具体方法。
The second is a novel modeling strategy that combines an artificial neural network(ANN)as an approximator of the growth rate with prior knowledge represented by the mass balance of sucrose crystal.
第二种方法是一种新颖的建模策略，它把晶体生长率作为非线性逼近器的人工神经网络（ANN）与由蔗糖晶体质量平衡所表述的先前既定的知识相结合。
Because of the restraint of space environment and the aerocraft, the growth of crystal experiment have a low success rate, simulation is a effective way out.
由于空间环境和飞行器的限制，空间晶体生长实验的成功率较低，仿真实验是解决这一问题的有效途径。
The critical growth rate was calculated and applied to explain the experimental results of crystal growth.
通过临界生长速率解释了一系列晶体生长的实验结果。
The researches focus on how to maximize crystal's growth rate, shorten the growth cycle, reduce costs, and improve the quality of the crystal.
对于其研究的热点，主要在于：在保证晶体质量的前提下尽量提高晶体的生长速度、缩短其生长周期、降低成本。
The effect of temperature, average residence time and density of sulphate acid were discussed on nucleation rate, growth rate and crystal shape.
分别讨论了结晶温度、平均停留时间、硫酸质量分数等因素对结晶成核速率、晶体成长速率以及晶体形状、大小的影响。
In the light of fractal theory and the theory of crystal nucleation and growth, we have discussed the effect of temperature ramp rate on the sizes of the formed silicon particles.
根据晶体生长理论，讨论了升温速率的高低与所形成的纳米硅颗粒大小的关系。
That meant juice concentration got higher, the resistance of quality and energy of juice were higher, the growth rate of ice crystal was lower.
意味着果汁浓度的提高加大了果汁中质量和能量传递的阻力，使冰晶生长速度变慢。
Therefore, CdZnTe crystal with low dislocation density can be obtained by employing and adjusting appropriate crucible moving rate during the crystal growth.
因此，通过适当的选择和调节坩埚下降速度是获得高质量晶体的可行技术方案。
Therefore, CdZnTe crystal with low dislocation density can be obtained by employing and adjusting appropriate crucible moving rate during the crystal growth.
因此，通过适当的选择和调节坩埚下降速度是获得高质量晶体的可行技术方案。
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