According to the relationship between the crystal doping concentration and the laser pump light absorption, gives the ladder doped crystal.
根据激光晶体掺杂浓度与泵浦光吸收之间的关系得出了阶梯掺杂晶体模型。
Their first strategy is a technique, common in chip manufacturing, called doping, in which atoms of some other element are added to a semiconductor crystal.
第一步策略是一个在芯片产业上普遍使用的技术，叫做“掺杂”，就是在半导体晶体中加入其它元素的原子。
The growth and properties of doping CLBO crystal have been investigated by top-seeded Kyropoulos method.
本文采用顶部籽晶泡生法进行掺杂CLBO晶体的生长及性能研究。
The results indicate that a stable and suitable thermal field, the transparence of B_2O_3, doping quantity are important conditions for growth of twin-free InP crystal.
实验证明，建立一个稳定合适的热场、保持b_2o_3的透明度、控制好掺杂量等是减少孪晶的必要条件。
The mode and defect mode of electromagnetic wave in flat-panel doping photonic crystal is studied by the characteristic matrix method.
利用特征矩阵法研究了一维平板掺杂光子晶体中电磁波的模式及其缺陷模特性。
The crystal with the same Mn doping amount, compared with the growth state, the defect increased at the oxidation state and decreased at the reduction state.
同一掺杂量的铌酸锂晶体，与生长态的相比，晶体缺陷氧化态的增加，还原态的减少。
The influence of Mg concentration in doping on phase matching temperature, phase matching Angle, optical homogeneity, lattice parameter and density of the crystal is also stated.
掺镁浓度对晶体相匹配温度、相匹配角、光学均匀性、点阵常数和密度的影响。
The technique of high precision trace neutron transmutation doping of detector grade high resistance zone-refined Si mono-crystal is introduced.
主要介绍探测器级特高阻区熔硅单晶的高精度微量中子嬗变掺杂技术。
Otherwise, the volume of the crystal unit cell increase slightly with no regularity after doping.
另外，掺质后，晶体的单胞体积一般略有增大，但未呈现出规律性。
We can change the behavior of a pure silicon crystal by doping it.
当纯矽的晶体和其它不纯物混杂在一起，矽的本质会改变。
The new defect mode structure of flat-panel doping photonic crystal is obtained.
得出了一些不同于一维非受限掺杂光子晶体缺陷模的新特征。
The new defect mode structure of flat-panel doping photonic crystal is obtained.
得出了一些不同于一维非受限掺杂光子晶体缺陷模的新特征。
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