The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
Dislocation and plastic deformation was produced in crystal material under shock loading. phase change could occur when shock loading was strong.
在冲击加载下，晶体材料中产生了位错和塑性变形。在强冲击时还可出现相变变化。
A homogeneous dislocation defect model was established to study the sonic waveguide of a photonic crystal with defects.
为了研究声子晶体因缺陷而产生的声波导问题，提出了同质位错缺陷模型。
After deformation and heat treatment, single crystal al wire will generate a mass of dislocation cells, high density dislocations and evident recovery phenomena.
单晶铝线材在变形和加热后会产生大量的位错胞、高密度位错和明显的回复再结晶现象。
The crystal structure and some defects such as tilt boundary and dislocation of lanthanum chromates were investigated by high resolution microscopy (HERM).
用高分辨电子显微镜对铬酸镧的晶体结构及晶界、位错等晶体缺陷进行了观察与分析。
The dislocation etch pits density(EPD) of copper single wires is related with corroded time, deformative extent and crystal orientation of material.
铜单晶线材中位错蚀坑密度与材料浸蚀时间，变形量以及晶体学取向有关。
It is mainly because that dislocation slides easily within large twin crystal, which leads to the decrease of strength and the increase in plasticity.
主要是位错在大孪晶中易于移动，从而造成强度下降，塑性提高。
The strengthening mechanism is load transfer effect, dislocation strengthening and fine crystal reinforcing.
其强化机理为剪切应力转移强化、位错强化和细晶强化。
Therefore, CdZnTe crystal with low dislocation density can be obtained by employing and adjusting appropriate crucible moving rate during the crystal growth.
因此，通过适当的选择和调节坩埚下降速度是获得高质量晶体的可行技术方案。
This exact expression for the self energy is the basis for analyzing the dislocation nucleation from crystal surface.
认为所给出的其弹性自能的精确表达式是分析位错从材料表面生成的理论基础。
This exact expression for the self energy is the basis for analyzing the dislocation nucleation from crystal surface.
认为所给出的其弹性自能的精确表达式是分析位错从材料表面生成的理论基础。
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