While in HgCdTe with high dislocation density, the arsenic distribution is complex, exhibiting multi component exponential distribution.
而在缺陷密度比较大的碲镉汞材料中,砷的分布呈多段指数型分布,表现出更复杂的多机制扩散特性。
While in HgCdTe with high dislocation density, the arsenic distribution is complex, exhibiting multi component exponential distribution.
而在缺陷密度比较大的碲镉汞材料中,砷的分布呈多段指数型分布,表现出更复杂的多机制扩散特性。
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