CMOS structure is utilized to show the advanced properties of the description language defined.
本文结合一个CMOS结构实例，介绍了所定义的微结构描述语言的各项先进特性。
This paper analyses the relationship between node Capacitance of Al-gate and Si-gate CMOS structure and geometric layout, material characteristics, physical and technological parameters in details;
本文仔细地分析了铝栅和条状硅栅CM。S结构的节点电容与几何结构、物理、材料和工艺参数关系；
This circuit structure is simple and can be realized by the standard CMOS process easily.
该电路结构简单，易于实现，且制作工艺与标准CMOS工艺完全兼容。
Furthermore, CMOS MOCCII circuit with simple structure has been configured using basic current mirror technique. Both proposed MOCCII filters have been verified by PSPICE simulation.
同时应用基本电流镜技术实现出结构简单的高精度CMOSMOCCII，并对MOCCII及提出的滤波器电路进行了PSPICE仿真。
Furthermore, the design thinking and the characteristics of structure and working principle of ac CMOS gates are introduced.
然后介绍了交流CMOS门电路的设计思想及结构与工作原理上的特点。
Based on analysis of the principle of substrate current of MOSFETs, a new hot carriers resistant structure of CMOS digital circuits is proposed.
本文在分析MOSFET衬底电流原理的基础上，提出了一种新型抗热载流子退化效应的CMOS数字电路结构。
In this paper, the traditional cascode structure of CMOS LNA is considered as a two-stage amplifier and inter-stage matching network is introduced accordingly.
本文也对CMOS低噪声放大器进行了分析，将传统共源共栅结构看作二级放大器级联形式，并由此引入级间匹配网络。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
Integration project of array with CMOS signal circuit was brought forward according to the fabrication process of plane-array sensor and its structure characters.
根据制作阵列的工艺过程和结构特点，提出了阵列和CMOS信号电路的集成方案。
The research on the circuit structure and the process technique is carried out to satisfy the demands, especially, the investigation on the ADC manufactured with standard CMOS process.
为了满足这些需求，需要在电路结构和工艺技术方面进行不断的研究，特别是应用标准CMOS工艺来制造这种ADC。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
In this paper, two kinds of standards CMOS technology memory cell structure are introduced.
本文提出了两种基于标准CMOS工艺的存储单元结构。
The work principle and total structure of CMOS image sensor are introduced. The internal structure features and applications of special CMOS image sensor MT9M001 are reviewed.
介绍了CMOS图像传感器的工作原理、总体结构，并具体介绍了一种CMOS图像传感器MT9M 001的内部结构、特点及应用。
A new CMOS active pixel array structure that achieves wide dynamic range using dual sampling is reported.
提出了一种新型双采样结构大动态范围CMOS图像传感器的像素阵列结构。
Three common power bus ESD protection structures in CMOS IC were discussed, the circuit structure and working theories were analyzed, an improved power bus ESD protection structure was put forward.
讨论了三种常见的CMOS集成电路电源总线esd保护结构，分析了其电路结构、工作原理和存在的问题，进而提出了一种改进的ESD保护电源总线拓扑结构。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
With digital processing and reconstruction, an improved selective reset pixel structure and a design of pixel array to extend the dynamic range of CMOS image sensor (CIS) was achieved.
采用数字处理和重构的方法，实现了一种新型选择性复位像素结构及其像素阵列的设计，扩展了CMOS图像传感器(CIS)的动态范围。
The paper introduced the data structure of CMOS, the means of eliminating the CMOS. For example, we can eliminate the CMOS with all-powerful password, DEBUG, discharge and so on.
主要介绍了CMOS的数据结构、清除CMOS密码的方法，如使用万能密码、调试工具DEBUG、跳线法、放电清除等。
The optical system of the micro digital sun sensor consists of APS CMOS image sensor and MEMS based diaphragm with pinhole array structure.
微型数字式太阳敏感器光学系统由APSCMOS图像传感器和基于MEMS工艺的小孔阵列式光线引入器组成。
This paper introduces a SCR soft starter controlled by CMOS digital integrated circuits. The operation principle and circuit structure of the soft starters are analyzed in detail.
介绍用CMOS数字电路实现的SCR软起动器，对软起动器的工作原理、电路组成作了详细的分析。
This paper introduces a SCR soft starter controlled by CMOS digital integrated circuits. The operation principle and circuit structure of the soft starters are analyzed in detail.
介绍用CMOS数字电路实现的SCR软起动器，对软起动器的工作原理、电路组成作了详细的分析。
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