This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
The information carrier of traditional electronic components such as diode and audion, is electronic charge, but the electronic spin is not considered.
传统的电子元件，比如二极管和三极管，它们的信息载体都是电子电荷，电子的自旋没有被利用。
The small signal analysis of laser diode type all optical wavelength converter is presented using carrier depletion, and the frequency response function is given.
理论上基于载流子消耗机制，对激光器型波长转换器进行了小信号分析，给出了频率响应函数。
And the decay rate of these deviations depends on not only the carrier lifetime but also the photon lifetime, which is different from that of an ordinary diode laser experiencing turn-on process.
该衰减率不仅与载流子寿命有关，还和光子寿命有关，这一点与普通半导体激光器“接通”时的动态行为有所区别。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
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