• In this paper, the total energy in the strained layer with nonstrained capping layer is calculated using continuum model.

    利用连续介质模型,计算有非应变盖层的应变外延层结构中单位面积的能量。

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  • During joint mining of open-pit and underground, the ground air leakage control was realized by laying the capping layer on the open pit.

    在露天与地下联合开采时期,控制地表漏风主要通过露天坑底铺设覆盖层来实现。

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  • The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer.

    通过将多孔介电层经中间的增粘介电层粘合到基本上无孔的贴面层上来制备本发明的结构。

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  • It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.

    它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。

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  • It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.

    它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。

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