The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C -V特性及记忆窗口。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The circuit consists of an inductor, capacitor and a memory-resistor, or memristor.
感应 器、电容器、记忆电阻器（或叫记忆器）。
A decoupling capacitor is omitted in the power supply structure of the memory, and the area of the structure is reduced.
本发明的存储器的供电结构省去一个去耦电容，减小了该结构的面积。
A decoupling capacitor is omitted in the power supply structure of the memory, and the area of the structure is reduced.
本发明的存储器的供电结构省去一个去耦电容，减小了该结构的面积。
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