The device utilizes three phase construction with the technology of buried channel and three layer polysilicon.
该器件为三相结构，采用埋沟和三层多晶硅技术。
The device utilizes three-phase construction, with the technology of buried-channel and four-layer polysilicon.
该器件采用三相结构，埋沟和四层多晶硅技术。
A 4096 element linear CCPD image device has been successfully designed and fabricated with double-linear three phase buried-channel construction.
采用双线型三相埋沟结构，设计并研制成功4096位线阵CCPD摄像器件。
The mechanics of the potential well of buried channel charge coupled device (CCD) are described.
对埋沟电荷耦合器件（CCD）的势阱形成机理进行了描述。
The mechanics of the potential well of buried channel charge coupled device (CCD) are described.
对埋沟电荷耦合器件（CCD）的势阱形成机理进行了描述。
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