The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
The discharge breakdown time, peak current as a function of charge voltage and buffer gas are obtained.
得到了放电击穿时间、放电峰值电流随充电电压、不同气体介质变化的曲线；
The experimental results show that not only space charge injection but its detrapping also makes samples breakdown.
结果表明，电介质的击穿并不总是发生在电荷的注入过程中，也可以发生在空间电荷的脱阱过程中。
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量，对相关击穿电荷进行了测试和研究。
According to the mechanism of current transport, we suggest a breakdown model in which charge accumulation, trapping density and position of its center of gravity are all considered.
根据电流传输机构，本文提出一种考虑了电荷积累、陷阱密度及其重心位置的击穿模型。
According to the mechanism of current transport, we suggest a breakdown model in which charge accumulation, trapping density and position of its center of gravity are all considered.
根据电流传输机构，本文提出一种考虑了电荷积累、陷阱密度及其重心位置的击穿模型。
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