Figure 7 shows the sequence for tape bonding the chip and assembling the package.
图7所示为带状引线连接芯片和管壳装配的工艺程序。
In microelectronics, the process of connecting wires from the leads on the package to the bonding pads on the chip. Part of the assembly process.
在微电子中，使用电线将数据包的引线与芯片上的结合区相连接的过程。装配过程的一部分。
The RF characteristics of bonding wire interconnection in a simple package model were simulated.
针对一种用键合线连接的简单封装模型进行射频性能的模拟。
Also the technique for adjusting the amplifier dynamically in miniature package by supersonic bonding has been developed.
设计了一种用超声键合法在微型管壳内动态调试放大器的技术方法。
Through the silicon bonding, we achieve a wafer-level vacuum package, and the wire-bonding PAD is made after the fabrication is complete.
在完成整体结构圆片级真空封装的同时，通过引线腔结构方便地实现了中间电极的引线。
Through the silicon bonding, the wafer-level vacuum package is achieved and the wire-bonding PAD is made after all the fabrication work is finished.
在完成整体结构圆片级真空封装的同时通过引线腔结构方便地实现了中间电极的引线。
This paper talks about the major supporting technologies for MCM package: the Interlinkage of Chips, Flip Chip Bonding, Flip Bonding.
本论文研究了MCM中芯片安装互连、芯片倒装焊接及其关键支撑技术等内容。
Other than conventional direct thermal bonding, this method has higher efficiency, lower deformation and can realize selective package.
与常用的直接热键合相比，具有效率高、变形小、可实现选择封装等优点。
This paper reports on an RF MEMS package based on LTCC technology and gold-tin eutectic bonding, and also evaluates physical and RF characteristics of the proposed structure.
本文报告了一种基于低温共烧陶瓷技术和金锡共晶焊料的射频微机电的封装技术，并评估了该封装结构的物理及射频特性。
This paper reports on an RF MEMS package based on LTCC technology and gold-tin eutectic bonding, and also evaluates physical and RF characteristics of the proposed structure.
本文报告了一种基于低温共烧陶瓷技术和金锡共晶焊料的射频微机电的封装技术，并评估了该封装结构的物理及射频特性。
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