In the 1960s the IC market was broadly on bipolar transistors.
六十年代集成电路市场主要为双极型晶体管。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
垂直双极型晶体管(118)比CMOS晶体管(116)高。
Thase results provides a theoretical basis for rational DE - sign of low temperature bipolar transistors.
这些结果将为低温双极晶体管的设计提供理论依据。
The paper presents the experiment results of MOS, MNOS capacitors and bipolar transistors by RF annealing.
本文介绍了MOS、MNOS电容器和双极型晶体管进行射频等离子退火的实验结果。
Ionizing radiation response of bipolar transistors at different dose rates and biases has been investigated.
对双极晶体管进行了不同剂量率、不同偏置的电离辐照实验。
The thickness of collector is one of the factors that limit cut-off frequency in microwave bipolar transistors.
在微波双极型晶体管中，收集区的厚度是影响其截止频率的一个重要因素。
Experiment using discrete bipolar transistors has been performed to verify the effect of the photocurrent compensation method.
采用标准分立双极元件，对双极晶体管瞬态辐射光电流分流补偿法进行了实验验证。
This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.
提出一种求解异质结双极晶体管(HBT)小信号等效电路模型的解析方法。
Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.
大多数传统的音频功率放大器是用双极型工艺设计和制造，其基础在于良好的双极型三极管特性。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
Using a 32-bit microprocessor and insulated gate bipolar transistors, the M-Max series provides quiet motor operation, high efficiency and smooth, low-speed performance.
本系列产品使用32针微处理器和绝缘栅双极型晶体管，具有电动机运行不发出噪声、高效、低速等性能特点。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
利用工作在亚阈值区的MOS管代替传统电流基准中的三极管或电阻器件，实现了一款全cmos器件的电流基准。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
Since the output pulse width of the anode control power supply had varied greatly, the series-connected Insulated Gate Bipolar Transistors(IGBT) switch was applied to anode control power supply.
针对阳极控制电源的输出脉冲宽度变化大的特点，采用串联固态开关控制阳极电压。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.
本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
Bipolar junction transistors may be burned out by injected electromagnetic pulse.
空间电磁脉冲注入硅双极型晶体管后可能会导致晶体管烧毁。
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