A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.

设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。

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Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.

ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。

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A bipolar junction transistor relates to the technical field of a semiconductor power device.

双极结型晶体管，涉及半导体功率器件技术领域。

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A bipolar junction transistor relates to the technical field of a semiconductor power device.

双极结型晶体管，涉及半导体功率器件技术领域。

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