• Second breakdown mechanisms of bipolar power transistor is summarized.

    概述了双极功率晶体管二次击穿机理。

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  • This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…

    该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。

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  • Partial Pressure Connection: the varistor of the two fixed end of the bipolar power supply, respectively connected by a sliding side and either a fixed terminal connected to the circuit.

    分压接法:将变阻器的两个固定端分别与电源的两极相连,由滑动端和任一固定端连接到电路。

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  • A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.

    设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。

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  • As the existing great power consumption of empty-load or light-load, the bipolar PWM control can be applied only in small or middle power servo control systems.

    在轻载或空载时由于存在大的功率损耗,双极性PWM控制只能被应用于中、小功率伺服控制系统。

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  • Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.

    由于其自身的结构与封装形式,塑封双极型功率管存在很多可靠性问题。

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  • The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

    本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术,以及它们的应用。

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  • The functions of Bipolar coag, To shows power with number. A push--but—ton switch adjust power, applicable to coagulation in subtle operation. Especially applicable to neurosurery.

    具有双极凝功能。数字显示功率,按钮开关调节功率,可在精细手术中作凝血作用,特别适用于神经外科手术。

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  • The three-dimensional heat conduction equation for steady state operating conditions of bipolar microwave power transistors has been solved.

    本文对双极性微波功率晶体管(以下简称微波功率晶体管)求解了稳态工作条件下的三维热传导方程。

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  • A power amplification of H-bridge bipolar PWM control is designed for controlling DC micro-motor of positive rotation, reverse rotation and speed regulation.

    基于H型双极模式P WM控制原理,设计了一种直流微电机正反转调速功率放大电路。

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  • This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).

    本文在分析了IGBT(绝缘栅双极晶体管)特性的基础上,设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。

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  • Majority of conventional power amplifiers are designed using bipolar technology on the basis of well-known merits of bipolar transistors.

    大多数传统的音频功率放大器是用双极型工艺设计和制造,其基础在于良好的双极型三极管特性。

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  • The silent discharge reactor induced bipolar pulse power-supply can combine advantages of short pulse corona discharge and dielectric barrier discharge as well.

    将双极性脉冲高压引入介质阻挡无声反应器,可以高效注入能量,兼有脉冲电晕放电和介质阻挡无声放电的特点。

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  • Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.

    绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件,驱动器的合理设计对于IGBT的有效使用极为重要。

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  • Since the output pulse width of the anode control power supply had varied greatly, the series-connected Insulated Gate Bipolar Transistors(IGBT) switch was applied to anode control power supply.

    针对阳极控制电源的输出脉冲宽度变化大的特点,采用串联固态开关控制阳极电压。

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  • A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.

    介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。

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  • The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.

    本仪器测试的对象为小功率晶体管,包括:各种二极管、双极性三极管、场效应管等。

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  • The paper focuses on circuit design of power switch with bipolar technology and audio amplifier with CMOS techn.

    本文论述双极型功率开关电路和CMOS音频功率放大器电路设计。

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  • An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).

    介绍了一种用于大功率IGBT厚膜驱动电路的380V系统输入、多路输出辅助开关电源。

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  • Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.

    ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。

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  • A bipolar junction transistor relates to the technical field of a semiconductor power device.

    双极结型晶体管,涉及半导体功率器件技术领域。

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  • On-board 90v bipolar switching power supply.

    车载90V双极开关电源。

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  • In 1991, the Soviet Union ended the bipolar US-Soviet strategic balance of power in the structure of the international system has undergone fundamental changes.

    1991年,苏联解体结束了美苏两极的战略均势,国际体系的结构发生了根本性的变化。

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  • In 1991, the Soviet Union ended the bipolar US-Soviet strategic balance of power in the structure of the international system has undergone fundamental changes.

    1991年,苏联解体结束了美苏两极的战略均势,国际体系的结构发生了根本性的变化。

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