• This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.

    提出一种求解异质晶体管(HBT)小信号等效电路模型解析方法

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  • In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.

    本文采用较全面包括四个寄生双极晶体管和MOS管的模型,详细分析瞬态辐照下CMOS相器的闩锁效应

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  • A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.

    本文提出互补横向绝缘栅晶体管CLIGBT网络模型

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  • The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

    模型考虑载流子速度饱和现象寄生双极性晶体管影响,获得了开态下LDMOS漂移中的电场分布

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  • The high speed insulated gate bipolar transistor (IGBT) transport model is derived by ambipolar transport theory in this paper.

    借助双极传输理论导出高速绝缘双极晶体管(IGBT)传输特性的物理模型

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  • The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.

    最后场下电子漂移速度稳态瞬态变化规律进行了研究

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  • This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…

    模型可供优化设计极型高频、高压、低饱和压降功率器件参考。

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  • The utility model provides a pair of electric coagulation forceps which is matched with a radio frequency bipolar coagulator for sealing blood vessels and other body tissues.

    实用新型提供一种射频双极凝固器配套使用以进行血管其他身体组织封口

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  • The utility model relates to a bipolar electrocoagulator which belongs to a medical apparatus. A double tube push-pull principal oscillation circuit is composed of a transistor.

    实用新型涉及电凝器,属于医疗仪器,由晶体管构成推挽电路。

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  • On the bipolar-pulse mode HIPIB apparatus, a planar diode model of self-magnetic field MID is proposed for analysis of the diode behaviour during the negative pulse stage.

    通过建立平面离子二极管模型分析脉冲阶段二极管初始等离子体形成。

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  • On the bipolar-pulse mode HIPIB apparatus, a planar diode model of self-magnetic field MID is proposed for analysis of the diode behaviour during the negative pulse stage.

    通过建立平面离子二极管模型分析脉冲阶段二极管初始等离子体形成。

    youdao

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