The diamond bipolar devices and the diamond FET are described.
对金刚石双极器件和金刚石场效应管进行了分析。
The enhanced damage was summarized for bipolar devices and bipolar linear circuits in the radiation environment of low dose rate. It could cause the early failure of systems.
综述双极器件和双极线性电路在低剂量率辐射环境下的增强损伤，它可引起系统的早期失效。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
A new two dimensional numerical analysis program SDA-1 is presented for semiconductor devices. It is applicable to two dimensional finite element numerical analysis of bipolar transistors and MOSFET.
本文给出了一个新的半导体器件两维数值分析程序SDA—1，该程序可对双极晶体管及MOS场效应晶体管进行有限元法两维数值分析。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
This video log amplifier is based on a monolithic IC, which is fabricated using PN junction isolation bipolar process by SISC, and all peripheral devices are integrated using hybrid IC process.
该视频对数放大器是在自制单片ic基础上混合集成，单片IC采用PN结隔离双极工艺制作。
Using the standard bipolar IC technology, a 3-D magnetotransistor is successfully designed, The sensitivity, linearity and offset of the devices are theoretically and experimentally analyzed.
本文将普通的双极型IC工艺用干磁敏器件的制作中，成功地研制了一种新型三维磁敏晶体管，并在理论和实验上分析讨论了其灵敏度、线性度和失调等问题。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
垂直双极型晶体管(118)比CMOS晶体管(116)高。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
垂直双极型晶体管(118)比CMOS晶体管(116)高。
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