Each device has an eight-bit CMOS shift register and CMOS control circuitry, eight CMOS data latches, and eight bipolar current-sinking Darlington output drivers.
每个器件都有一个八位CMOS移位寄存器和CMOS控制电路，八个CMOS数据锁存，八个双极电流吸收达林顿输出驱动器。
A high accuracy temperature sensor is designed by applying the temperature characteristics of a substrate bipolar transistor in CMOS technology.
利用CMOS工艺下衬底型双极晶体管的温度特性，设计了一种精度较高的温度传感器。
The bipolar transistors or the resistors in the traditional current reference were replaced by MOS transistors working in the subthreshold region to achieve an all CMOS current reference.
利用工作在亚阈值区的MOS管代替传统电流基准中的三极管或电阻器件，实现了一款全cmos器件的电流基准。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
This paper analyses the design of thermal protect for LDO, then gives a bipolar thermal protect circuit for LDO and a CMOS thermal protect circuit for LDO.
分析了LDO中过温保护电路的设计，主要介绍了LDO中双极型过温保护电路和CMOS过温保护电路。
A new photodetector, the bipolar junction photogate transistor, was proposed for CMOS image sensor.
本文提出一种新的用于CMOS图像传感器像素的光电检测器——双极结型光栅晶体管。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
The vertical bipolar transistors (118) are taller devices than the CMOS transistors (116).
垂直双极型晶体管(118)比CMOS晶体管(116)高。
The paper focuses on circuit design of power switch with bipolar technology and audio amplifier with CMOS techn.
本文论述双极型功率开关电路和CMOS音频功率放大器电路设计。
The paper focuses on circuit design of power switch with bipolar technology and audio amplifier with CMOS techn.
本文论述双极型功率开关电路和CMOS音频功率放大器电路设计。
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