It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c -V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
In the neutron radiation environment there occurs the change in C-V characteristics of the Tar-actor diodes. At the given bias the junction capacitance decreases with increase of neutron fluence.
在中子辐照环境下，变容二极管c—V特性发生变化，在给定偏置下，结电容随中子注量的增加而下降。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
当负偏压超过200V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
当负偏压超过200V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
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