The longitudinal bias stress may always weaken the anomalous amplitude-dependent effect, while the torsional one may induce different effects from different directions applied.
纵向偏应力总是削弱反常内耗效应，而切向偏应力因施加方向的不同引起不同的内耗效应。
We mainly focus on the threshold voltage shift under subsequent positive bias temperature (PBT) stress after the preceding NBT.
主要集中在对器件施加nbt和随后的PBT应力后器件阈值电压的漂移上。
The relation of stress time to parameter degradation is investigated under the condition of reverse bias of base-emitter junction.
在基极-发射极反向偏置的条件下，研究了应力作用时间与器件参数的退化关系。
However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT.
然而，辅助偏压太高会引起粗糙度和应力的上升，以及损伤阈值的下降。
However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT.
然而，辅助偏压太高会引起粗糙度和应力的上升，以及损伤阈值的下降。
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