The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .
位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。
Owing to the complexity in bias tire structure and material properties, it is both economical and exact to model the tire by using layer elements and solid elements.
由于斜交轮胎复杂的几何结构和材料特性，选用层单元和体单元的组合可以既经济又准确地对轮胎进行模拟。
The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
半导体发射区域能够回应于偏压全方向地发射光，而使多孔层增强通 过基层的发射区域的光的提取。
The temperature dependence of exchange bias and coercivity of ferromagnetic layer and antiferromagnetic gain layer is discussed.
讨论了铁磁反铁磁双层膜中交换偏置和矫顽场随温度变化的关系。
As for the vertical structure, it mainly bias to right; and near the bottom layer, it bias to left.
潮流垂直结构上主要为右偏，接近底层处为左偏。
The bias electrode accelerates the captured energy from an X-ray exposure through the amorphous selenium layer.
通过非晶硒层偏压电极加速从捕获能量X射线曝光。
The outer layer of the flat panel in this design is typically a high voltage bias electrode.
本设计中的平板外层是一个典型的高电压偏置电极。
The temperature dependence of exchange bias and coercivity of ferromagnetic layer and antiferromagnetic gain layer is discussed.
讨论了铁磁反铁磁双层膜中交换偏置和矫顽场随温度变化的关系。
One Layer of bias sisal sewed with two layers of cotton cloth, provides it good cutting and polishing properties, mainly used for pre-polishing of metal ware.
用两层棉布加上一层麻布车缝而成，同时具备切削及一定程度的抛光能力，主要用在预备抛光的金属制品上。
The relations of impurity profile in the inversion layer and the maximum channel potential versus dose, width of SiO_2 and gate bias are analysed.
分析了反型层的杂质分布、最大沟道电势与注入剂量、氧化层厚度和栅压等之间的关系。
The hole range of the net will be depleted entirely under bias voltage. The structure becomes PIN and surface depletion layer structure.
在反向工作电压作用下，网孔区将被耗尽，成为PN结与表面耗尽区结构统一的光探测器。
The hole range of the net will be depleted entirely under bias voltage. The structure becomes PIN and surface depletion layer structure.
在反向工作电压作用下，网孔区将被耗尽，成为PN结与表面耗尽区结构统一的光探测器。
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