In the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed.
提出了阻断电压设计中关于基区宽度和基区杂质浓度选择的简化公式。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
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