Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature single electron tunneling studies were reported.
利用针尖修饰及纳米组装技术，采用三种不同的新方法构造出串联双隧穿结结构。
Quantum tunneling is an effect where a particle can pass through a barrier it would not normally have the energy to overcome.
量子隧穿效应是指粒子能够穿过正常来说它的能量不足以通过的障碍。
The phonon emission rate and the phonon assisted tunneling (PAT) current in an asymmetric double barrier structure are theoretically studied.
理论研究了非对称双势垒结构中光学声子发射率和光学声子辅助隧穿电流。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
We constructed a strain sensitive model through the analysis of the Ru-based thick film strain resistors tunneling barrier model.
通过分析钌基厚膜应变电阻的隧道势垒模型，提出力敏模型。
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。
Then a new tunneling time and its associated lateral shift is introduced under the assumption that the tunneling speed is the energy transfer speed in the barrier.
在简要地回顾了位相时间、特别是与其关联的横向位移在不透明极限下的饱和性质之后，给出了与能量转移速度相关的隧穿时间及相应的横向位移。
A formal solution for the wave functions of the tunneling electrons through a rectangular barrier under the electric field is given.
给出了在矩形势垒区存在电场作用时，隧穿电子波函数的形式解。
Current flows through the device by the process of quantum tunneling: a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator.
电子在元件中利用量子穿隧效应流动，少量的电子可穿过绝缘层的障碍到达另一边。
We have used STM to investigate the electron tunneling spectroscopy, as well as the tunneling barrier heights, in two kinds of iron oxides prepared differently on iron single crystal surfaces.
报道了利用扫描隧道显微术（STM）对金属表面氧化物层进行电子隧道谱研究的结果。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
用双势垒模型研究了半导体异质结量子阱的隧穿特性。
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