The semiconductor nuclear detector used in said invention adopts the GL mode Li-drift-Au sisurface-barrier detector.
本发明的装置中所用的半导体核探测器最好是采用GL型锂漂移金硅面垒探测器。
A semiconductor fast neutron spectrometer consisting of a Au-Si surface barrier detector and a conical polyethylene foil radiator is described.
本文描述了一个由金硅面垒型探测器和锥形面聚乙烯薄膜辐射体所组成的快中子谱议。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
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