It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-level-assistant tunneling;
结果表明，相对理想情形，特性曲线的反向偏压区漏电因深能级隧穿偏大；正向小偏压下因沿着位错汇聚金属产生漏电流；
When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized.
当施加反向偏置电压时，形成的耗尽层厚度变大，从而使热载流子的产生减到最小。
When a backward biasing voltage is applied, the thickness of a depletion layer formed is made large, so that generation of hot carriers is minimized.
当施加反向偏置电压时，形成的耗尽层厚度变大，从而使热载流子的产生减到最小。
应用推荐