Such levels previously have been reported only for photo diodes manufactured with special processes that use back-side illumination, or for discrete UV photo diodes.
如此高的水平以前仅被用于使用背面照明，或离散u V光二极管特殊工艺制造的光电二极管的报道。
Such levels previously have been reported only for photo diodes manufactured with special processes that use back-side illumination, or for discrete UV photo diodes.
如此高的水平以前仅被用于使用背面照明，或离散u V光二极管特殊工艺制造的光电二极管的报道。
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