B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD).
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
B-doped diamond films were grown on graphite substrates by hot filament assisted CVD method (HFCVD). The dopant was solid B_2O_3.
采用固体三氧化二硼，用热丝辅助化学气相沉积法在石墨衬底上沉积了掺硼金刚石涂层。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
The heat-resistance of Si-Ti-B doped diamond is higher than that of cobalt bonded diamond.
掺杂烧结金刚石的耐热性高于钴粘结金刚石。
The heat-resistance of Si-Ti-B doped diamond is higher than that of cobalt bonded diamond.
掺杂烧结金刚石的耐热性高于钴粘结金刚石。
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