The possibility of the stimulated radiation at the low atomic density is demonstrated, and the possibility of impurity examination by means of stimulated radiation signals is estimated.
证实了在低原子浓度下探测受激辐射的可能性，并估计了用受激辐射信号检测杂质的可能性。
Si and impurity elements of Fe and Cu in aluminum-silicon bonding wires were determined by inductively coupled plasma atomic emission spectrometry.
该方法应用于快速测定键合硅铝丝中的各种元素，结果满意。
It was found that the deepness of impurity energy level is related to the atomic Numbers of doped elements by the analysis of their electronic structures.
通过对电子结构的分析，发现杂质能级的深浅与掺杂元素原子序数有关。
The bigger the atomic number, the deeper the impurity level is.
原子序数越大，杂质能级越深。
The bigger the atomic number, the deeper the impurity level is.
原子序数越大，杂质能级越深。
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