In argon (ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
采用脉冲激光烧蚀技术在氩气环境下制备了纳米硅薄膜，研究了环境气体压强对纳米硅薄膜表面形貌的影响。
In argon (ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
采用脉冲激光烧蚀技术在氩气环境下制备了纳米硅薄膜，研究了环境气体压强对纳米硅薄膜表面形貌的影响。
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