This paper firstly gives a brief review about the history of amorphous semiconductor and the rapid progress in hydrogenated amorphous silicon (a-Si: h) film in recent years.
本文首先简要地回顾了非晶半导体的历史和近年来含氢非晶硅瞋的迅速进展。
The main attention has been paid on amorphous rare earth- transition metal alloy films for magneto-optical storage and amorphous semiconductor films for phase change optical storage.
我们主要注意磁光型存储的非晶态稀土-过渡金属合金薄膜和相变型光存储的非晶态半导体薄膜两个方面。
The structure model in amorphous semiconductor was analysed and probed into in this paper, and confirm the structure of middle and short range order in amorphous semiconductor by means of experiment.
以一定的结构模型分析探讨并从实验上证实了非晶半导体中短程序、中程序的存在。
This amorphous B_C_N behaves as an insulator below 920k, and transforms into semiconductor above 920k.
这种前驱物在920k以下为绝缘体，在920k由绝缘体转变为非晶半导体。
This amorphous B_C_N behaves as an insulator below 920k, and transforms into semiconductor above 920k.
这种前驱物在920k以下为绝缘体，在920k由绝缘体转变为非晶半导体。
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