This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.

加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。

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This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.

加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。

youdao